Last edited by Yojinn
Monday, May 18, 2020 | History

2 edition of InGaAsSb/GaSb thermophotovoltaic cells, phase I effort found in the catalog.

InGaAsSb/GaSb thermophotovoltaic cells, phase I effort

InGaAsSb/GaSb thermophotovoltaic cells, phase I effort

under contract NAS3-96060

  • 45 Want to read
  • 36 Currently reading

Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, DC, Springfield, Va .
Written in English

    Subjects:
  • Gallium antimonides.,
  • Indium gallium arsenides.,
  • Photovoltaic cells.,
  • Exothermic reactions.,
  • Molecular beam epitaxy.,
  • Fabrication.

  • Edition Notes

    StatementYabo Li ... [et al.].
    SeriesNASA contractor report -- 204146., NASA contractor report -- NASA CR-204146.
    ContributionsLi, Yabo., United States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL17700199M


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InGaAsSb/GaSb thermophotovoltaic cells, phase I effort Download PDF EPUB FB2

InGaAsSb/GaSb thermophotovoltaic cells, phase I effort under contract NAS (SuDoc NAS ) [NASA] on *FREE* shipping on qualifying : NASA. Get this from a library. InGaAsSb/GaSb thermophotovoltaic cells, phase I effort: under contract NAS [Yabo Li; United States.

National Aeronautics and Space Administration.;]. Buy InGaAsSb/GaSb thermophotovoltaic cells, phase I effort under contract NAS (SuDoc NAS ) by NASA (ISBN:) from Amazon's Book Store. Everyday low prices and free delivery on Author: NASA. The authors have studied efficient p-on-n homo- (InGaAsSb/GaSb) and heterojunction (InGaAsSb/AlGaAsSb/GaSb) thermophotovoltaic (TPV) cells with respect to the recombination velocity at the cap-layer/emitter interface, S.

In both cell types the open-circuit voltage, V{sub oc}, and the short-circuit current, J{sub ac}, have about the same sensitivity to S. The dark current, J{sub 0}, is the most Author: V.B. Khalfin, D.Z. Garbuzov, H. Lee, G.C. Taylor, N. Morris, R.U. Martinelli, J.C.

Connolly. Conference: Thermophotovoltaic Cell Temperature Measurement Issues. Thermophotovoltaic Cell Temperature Measurement Issues. Full Record; Other Related Research.

We have studied efficient p-on-n homo- (InGaAsSb/GaSb) and hetero-junction (InGaAsSb/AlGaAsSb/GaSb) thermophotovoltaic (TPV) cells with respect to the recombination velocity at the cap-layer/emitter interface, S.

In both cell types the open-circuit voltage, Voc, and the short-circuit current, Jsc, have about the same sensitivity to S. The dark current, J0, is the most sensitive of by: 3.

formation of PV cells. The maximum efficiency of 6 % has been achieved for GaSb cells behind GaAs top cell at concentration ratio of suns, and % behind a top double-junction GaInP/GaInAs cell with GaAs substrate of µm in thickness.

Efficiency of 19 % was measured in GaSb TPV cells illuminated by solar powered tungsten emitter. Available in the National Library of Australia collection. Format: Book, Microform; 1 v. 1. Introduction. Interest is growing in thermophotovoltaic (TPV) cells and TPV power generation systems.TPV generation of electricity has application in electric grid-independent or self-powered gas appliances, portable generators, co-generators of electricity and heat, hybrid electric vehicles, recovery systems of waste heat from industrial processes, by: Available in the National Library of Australia collection.

Format: Book, Microform, Online; 1 v. InAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of μm show a dynamic impedance of R0A = kΩ cm2 at 77 K and a responsivity of 2 A/W, corresponding to a detectivity of D.

Quaternary InGaAsSb Thermophotovoltaic Diodes Article (PDF Available) in IEEE Transactions on Electron Devices 53(12) - January with Reads How we measure 'reads'.

Rotating Disk Reactors used for Chemical Vapor Deposition have evolved into a leading manufacturing technology for several materials, including metals, compound semiconductors, oxides, silicides, and nitrides. One of the hurdles to be surmounted in bringing this technology into routine high yield.

Indium-antimonide quantum dots are for the first time formed on the surface of an epitaxial InGaAsSb layer isoperiodic to a GaSb() substrate by liquid-phase epitaxy in the range of temperatures T = –°C.

Transmission electron microscopy shows that, the shape of quantum dots is close to a truncated cone and their distribution in terms of height and base size in the ensemble is Cited by: 5.

Mid-IR (λ≈3– μm) light emitting diodes with quinternary AlInGaAsSb barriers and InGaAsSb strained quantum wells grown on GaSb substrates have been demonstrated. The devices produced a quasi-cw emission power of mW at room temperature and mW at T=80 by: This banner text can have markup.

web; books; video; audio; software; images; Toggle navigation. This book features contributions from pioneers of next generation photovoltaic research and presents a comprehensive account of the current state-of-the-art in all aspects of the field.

Topics covered include multi-junction solar cells (the method closest to commercialisation), quantum dot solar cells, hot carrier solar cells, multiple quantum. Thermophotovoltaic conversion 60 Hot carrier cell 60 Tandem cells 60 Intermediate level cells 61 Photon up- and down-conversion 61 Conclusions 62 References 63 4 Tandem cells for very high concentration AWBett 64 Introduction 64 Tandem solar cells 66 Mechanically stacked tandem cells the basic requirements for a solar cell 57 Concepts for solar cells with ultra high efficiencies 59 Thermophotovoltaic conversion 60 Hot carrier cell 60 Tandem cells 60 Intermediate level cells 61 Photon up- and down-conversion 61 Conclusions 62 References 63 4 Tandem cells for very high concentration A W.

Molecular beam epitaxial growth ofIn x Ga 1−x As y Sb 1−y lattice-matched to () GaSb substrate withx up to is 2 andSb 2 sources were used and growth was studied in the temperature range of ° C ∼ ° C.

Alloys with room temperature photoluminescence peak wavelengths as long as µ have been grown with specular by:. Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-infrared (2–5 μm spectral domain) are needed for applications such as high sensitivity gas analysis by tunable diode laser absorption spectroscopy (TDLAS) and environmental by: Free essays, homework help, flashcards, research papers, book reports, term papers, history, science, politics.Converting chemical energy into electrical energy: the basic requirements for a solar cell Concepts for solar cells with ultra high efficiencies Thermophotovoltaic conversion Hot carrier cell Tandem cells Intermediate level cells Photon up- .